VISHAY SIHU3N50D-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHU3N50D-GE3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage500V
Current - Continuous Drain(Id)1.9A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number-
Input Capacitance(Ciss)-

Technical details

500V 1.9A 5V 69W TO-251-3 Single FETs, MOSFETs RoHS

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