VISHAY · FETs & Power MOSFETs · MPN SIHS90N65E-GE3
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 591nC@10V |
| Current - Continuous Drain(Id) | 87A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 625W |
| RDS(on) | 29mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.826nF |
650V 87A 2V 625W 29mΩ@10V 1 N-channel TO-274AA Single FETs, MOSFETs RoHS