VISHAY · FETs & Power MOSFETs · MPN SIHS20N50C-E3
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| Gate Charge(Qg) | 76nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 250mW |
| RDS(on) | 270mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.942nF |
500V 20A 5V 250mW 270mΩ@10V 1 N-channel TO-274AA Single FETs, MOSFETs RoHS