VISHAY · FETs & Power MOSFETs · MPN SIHP690N60E-GE3
No reviews yet — be the first to review VISHAY SIHP690N60E-GE3.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 6.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 700mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 347pF |
| Type | N-Channel |
600V 6.4A 5V 62.5W 700mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS