VISHAY · FETs & Power MOSFETs · MPN SIHP5N80AE-GE3
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 16.5nC@10V |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 4.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 1.17Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 321pF |
| Type | N-Channel |
N-Channel 800V 4.4A 62.5W Through Hole TO-220AB