VISHAY SIHP5N50D-E3

VISHAY · FETs & Power MOSFETs · MPN SIHP5N50D-E3

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage500V
Current - Continuous Drain(Id)5.3A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

500V 5.3A 5V 1 N-channel TO-220AB-3 Single FETs, MOSFETs RoHS

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