VISHAY · FETs & Power MOSFETs · MPN SIHP28N60EF-GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 120nC@10V |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 123mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.714nF |
600V 28A 2V 250W 123mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS