VISHAY SIHP25N40D-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHP25N40D-GE3

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Specifications

Gate Charge(Qg)88nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)177pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation278W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)170mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.707nF
TypeN-Channel

Technical details

N-Channel 400V 25A 278W Through Hole TO-220AB

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