VISHAY · FETs & Power MOSFETs · MPN SIHP25N40D-E3
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| Gate Charge(Qg) | 88nC@10V |
|---|---|
| Drain to Source Voltage | 400V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 278W |
| RDS(on) | 170mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.707nF |
400V 5V 278W 170mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS