VISHAY SIHP17N80E-BE3

VISHAY · FETs & Power MOSFETs · MPN SIHP17N80E-BE3

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)122nC@10V
Output Capacitance(Coss)81pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation208W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)290mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.408nF
TypeN-Channel

Technical details

800V 15A 4V 208W 290mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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