VISHAY SIHP17N80AEF-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHP17N80AEF-GE3

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Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation179W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)305mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 800V 17A 179W Through Hole TO-220AB

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