VISHAY SIHP16N50C-E3

VISHAY · FETs & Power MOSFETs · MPN SIHP16N50C-E3

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Specifications

Gate Charge(Qg)68nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.9nF
TypeN-Channel

Technical details

500V 16A 5V 250W 380mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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