VISHAY · FETs & Power MOSFETs · MPN SIHP15N60E-GE3
No reviews yet — be the first to review VISHAY SIHP15N60E-GE3.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 78nC@10V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 280mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.35nF |
600V 15A 4V 180W 280mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS