VISHAY · FETs & Power MOSFETs · MPN SIHP155N60EF-GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 38nC@10V |
| Output Capacitance(Coss) | 56pF |
| Current - Continuous Drain(Id) | 21A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 179W |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| RDS(on) | 137mΩ@10V |
| Input Capacitance(Ciss) | 1.465nF |
| Type | N-Channel |
600V 21A 5V 179W 137mΩ@10V N-Channel TO-220AB Single FETs, MOSFETs RoHS