VISHAY · FETs & Power MOSFETs · MPN SIHP14N50D-GE3
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| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 58nC@10V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 208W |
| RDS(on) | 400mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.144nF |
500V 9A 3V 208W 400mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS