VISHAY · FETs & Power MOSFETs · MPN SIHP12N60E-GE3
No reviews yet — be the first to review VISHAY SIHP12N60E-GE3.
| Gate Charge(Qg) | 58nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 53pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 147W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 380mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 937pF |
| Type | N-Channel |
N-Channel 600V 12A 147W Through Hole TO-220AB