VISHAY SIHP10N40D-E3

VISHAY · FETs & Power MOSFETs · MPN SIHP10N40D-E3

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)30nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation147W
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)526pF

Technical details

400V 10A 5V 147W 600mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS

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