VISHAY SIHLZ34S-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHLZ34S-GE3

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Specifications

Gate Charge(Qg)35nC@5V
Drain to Source Voltage60V
Output Capacitance(Coss)660pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.7W
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)50mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)1.6nF
TypeN-Channel

Technical details

60V 30A 2V 3.7W 50mΩ@5V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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