VISHAY SIHLL110TR-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHLL110TR-GE3

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Specifications

Gate Charge(Qg)6.1nC
Drain to Source Voltage100V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)930mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)540mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)250pF
TypeN-Channel

Technical details

N-Channel 100V 0.93A 3.1W Surface Mount SOT-223

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