VISHAY · FETs & Power MOSFETs · MPN SIHL620STRL-GE3
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| Gate Charge(Qg) | 16nC@5V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 5.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.1W;50W |
| RDS(on) | 800mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 360pF |
200V 5.2A 2V 800mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS