VISHAY · FETs & Power MOSFETs · MPN SIHK185N60EF-T1GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 114W |
| RDS(on) | 193mΩ@10V |
| Type | N-Channel |
600V 16A 5V 114W 193mΩ@10V N-Channel PowerPAK10X12 Single FETs, MOSFETs RoHS