VISHAY · FETs & Power MOSFETs · MPN SIHK125N60E-T1-GE3
No reviews yet — be the first to review VISHAY SIHK125N60E-T1-GE3.
| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 74pF |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 132W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.811nF |
| Type | N-Channel |
600V 21A 5V 132W 125mΩ@10V 1 N-channel N-Channel PowerPAK(10x12) Single FETs, MOSFETs RoHS