VISHAY · FETs & Power MOSFETs · MPN SIHK105N60EF-T1GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 51nC@10V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 142W |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.301nF |
600V 15A 3V 142W 105mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS