VISHAY · FETs & Power MOSFETs · MPN SIHK065N60E-T1-GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 72nC@10V |
| Output Capacitance(Coss) | 124pF |
| Current - Continuous Drain(Id) | 34A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 192W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 68mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.946nF |
| Type | N-Channel |
600V 34A 5V 192W 68mΩ@10V 1 N-channel N-Channel PowerPAK(10x12) Single FETs, MOSFETs RoHS