VISHAY SIHK045N60EF-T1GE3

VISHAY · FETs & Power MOSFETs · MPN SIHK045N60EF-T1GE3

No reviews yet — be the first to review VISHAY SIHK045N60EF-T1GE3.

Specifications

Drain to Source Voltage600V
Gate Charge(Qg)105nC@10V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)47A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation278W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)52mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.685nF
TypeN-Channel

Technical details

N-Channel 600V 47A 278W Surface Mount PowerPAK10x12

Related FETs & Power MOSFETs