VISHAY · FETs & Power MOSFETs · MPN SIHJ7N65E-T1-GE3
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
650V 5A 2V 96W 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS