VISHAY · FETs & Power MOSFETs · MPN SIHJ6N65E-T1-GE3
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 74W |
| RDS(on) | 755mΩ@10V |
| Number | 1 N-channel |
650V 3.6A 2V 74W 755mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS