VISHAY · FETs & Power MOSFETs · MPN SIHH24N65EF-T1-GE3
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 202W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 158mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.78nF |
650V 14A 2V 202W 158mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS