VISHAY · FETs & Power MOSFETs · MPN SIHH21N65EF-T1-GE3
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| Gate Charge(Qg) | 102nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 99pF |
| Current - Continuous Drain(Id) | 19.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.396nF |
| Type | N-Channel |
650V 19.8A 4V 156W 180mΩ@10V 1 N-channel N-Channel PowerPAK(8x8) Single FETs, MOSFETs RoHS