VISHAY · FETs & Power MOSFETs · MPN SIHH21N65E-T1-GE3
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| Gate Charge(Qg) | 99nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 12.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 170mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
650V 12.8A 2V 156W 170mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS