VISHAY SIHH150N60E-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHH150N60E-T1-GE3

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)36nC@10V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Pd - Power Dissipation156W
TypeN-Channel

Technical details

600V 12A 156W N-Channel PowerPAK8X8 Single FETs, MOSFETs RoHS

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