VISHAY · FETs & Power MOSFETs · MPN SIHH125N60EF-T1GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 47nC@10V |
| Output Capacitance(Coss) | 68pF |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.533nF |
| Type | N-Channel |
600V 23A 5V 156W 125mΩ@10V 1 N-channel N-Channel PowerPAK(8x8) Single FETs, MOSFETs RoHS