VISHAY · FETs & Power MOSFETs · MPN SIHH105N60EF-T1GE3
No reviews yet — be the first to review VISHAY SIHH105N60EF-T1GE3.
| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 87pF |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 174W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.099nF |
| Type | N-Channel |
600V 17A 5V 174W 105mΩ@10V 1 N-channel N-Channel PowerPAK(8x8) Single FETs, MOSFETs RoHS