VISHAY · FETs & Power MOSFETs · MPN SIHH100N60E-T1-GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 53nC@10V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.85nF |
600V 18A 3V 1 N-channel Single FETs, MOSFETs RoHS