VISHAY · FETs & Power MOSFETs · MPN SIHH068N60E-T1-GE3
No reviews yet — be the first to review VISHAY SIHH068N60E-T1-GE3.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 80nC@10V |
| Current - Continuous Drain(Id) | 34A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 202W |
| Reverse Transfer Capacitance (Crss@Vds) | 113pF |
| RDS(on) | 59mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.65nF |
600V 34A 3V 202W 59mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS