VISHAY · FETs & Power MOSFETs · MPN SIHG73N60AE-GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 394nC@10V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 417W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 40mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.5nF |
| Type | N-Channel |
600V 60A 4V 417W 40mΩ@10V 1 N-channel N-Channel TO-247AC Single FETs, MOSFETs RoHS