VISHAY · FETs & Power MOSFETs · MPN SIHG70N60AEF-GE3
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| Gate Charge(Qg) | 410nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 238pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 417W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 41mΩ@10V |
| Input Capacitance(Ciss) | 5.348nF |
| Type | N-Channel |
600V 60A 4V 417W 41mΩ@10V N-Channel TO-247AC Single FETs, MOSFETs RoHS