VISHAY · FETs & Power MOSFETs · MPN SIHG64N65E-GE3
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| Gate Charge(Qg) | 369nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 64A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 520W |
| RDS(on) | 47mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.497nF |
650V 64A 4V 520W 47mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS