VISHAY · FETs & Power MOSFETs · MPN SIHG47N65E-GE3
No reviews yet — be the first to review VISHAY SIHG47N65E-GE3.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 273nC@10V |
| Current - Continuous Drain(Id) | 47A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 417W |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| RDS(on) | 72mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.682nF |
650V 47A 2V 417W 72mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS