VISHAY · FETs & Power MOSFETs · MPN SIHG47N60EF-GE3
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| Gate Charge(Qg) | 228nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 379W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5nF |
N-Channel 600V 29A 379W Through Hole TO-247AC