VISHAY SIHG47N60E-GE3

VISHAY · FETs & Power MOSFETs · MPN SIHG47N60E-GE3

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)220nC@10V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)47A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation357W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)64mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.62nF
TypeN-Channel

Technical details

N-Channel 600V 47A 357W Through Hole TO-247AC

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