VISHAY SIHG47N60E-E3

VISHAY · FETs & Power MOSFETs · MPN SIHG47N60E-E3

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)220nC@10V
Output Capacitance(Coss)460pF
Current - Continuous Drain(Id)47A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation357W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)64mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.62nF
TypeN-Channel

Technical details

600V 47A 4V 357W 64mΩ@10V 1 N-channel N-Channel TO-247AC Single FETs, MOSFETs RoHS

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