VISHAY · FETs & Power MOSFETs · MPN SIHG47N60AEF-GE3
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| Gate Charge(Qg) | 189nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 167pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 313W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 61mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.576nF |
| Type | N-Channel |
N-Channel 600V 25A 313W Through Hole TO-247AC