VISHAY · FETs & Power MOSFETs · MPN SIHG44N65EF-GE3
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| Gate Charge(Qg) | 278nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 417W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.892nF |
650V 29A 2V 417W 1 N-channel TO-247AC Single FETs, MOSFETs RoHS