VISHAY · FETs & Power MOSFETs · MPN SIHG40N60E-GE3
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 600V |
| Gate Charge(Qg) | 197nC@10V |
| Output Capacitance(Coss) | 208pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 329W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.436nF |
600V 40A 4V 329W 75mΩ@10V 1 N-channel N-Channel TO-247AC Single FETs, MOSFETs RoHS