VISHAY · FETs & Power MOSFETs · MPN SIHG33N65EF-GE3
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| Gate Charge(Qg) | 171nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 31.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 313W |
| RDS(on) | 109mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.026nF |
650V 31.6A 2V 313W 109mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS