VISHAY · FETs & Power MOSFETs · MPN SIHG33N65E-GE3
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 173nC@10V |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 313W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.04nF |
650V 21A 2V 313W 105mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS