VISHAY · FETs & Power MOSFETs · MPN SIHG24N80AEF-GE3
No reviews yet — be the first to review VISHAY SIHG24N80AEF-GE3.
| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 90nC@10V |
| Output Capacitance(Coss) | 63pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 195mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.889nF |
| Type | N-Channel |
800V 20A 4V 208W 195mΩ@10V 1 N-channel N-Channel TO-247AC Single FETs, MOSFETs RoHS