VISHAY · FETs & Power MOSFETs · MPN SIHG24N65EF-GE3
No reviews yet — be the first to review VISHAY SIHG24N65EF-GE3.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 122nC@10V |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 156mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.774nF |
650V 24A 2V 250W 156mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS