VISHAY · FETs & Power MOSFETs · MPN SIHG22N50D-GE3
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| Gate Charge(Qg) | 98nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 312W |
| RDS(on) | 230mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.938nF |
500V 22A 5V 312W 230mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS